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ZXT12N50DXTC

Bipolar Transistors - BJT Dual 50V NPN

Manufacturer: Diodes Incorporated
Origchip NO: 233-ZXT12N50DXTC
Package: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Datasheet: PDF
Stock: 118
Description: Bipolar Transistors - BJT Dual 50V NPN (Kg)

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Details

Tags

Parameters
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins	8
Weight	139.989945mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	50V
Max Power Dissipation	1.04W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	3A
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	ZXT12N50D
Pin Count	8
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Transistor Application	SWITCHING
Gain Bandwidth Product	132MHz
Transistor Type	2 NPN (Dual)
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	3A
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 1A 2V
Current - Collector Cutoff (Max)	100nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 50mA, 3A
Collector Emitter Breakdown Voltage	50V
Transition Frequency	132MHz
Collector Emitter Saturation Voltage	135mV
Collector Base Voltage (VCBO)	100V
Emitter Base Voltage (VEBO)	7.5V
Continuous Collector Current	3A
Height	950μm
Length	3.1mm
Width	3.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free