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STP80NF12

Trans MOSFET N-CH 120V 80A 3-Pin(3+Tab) TO-220 Tube

Manufacturer: STMicroelectronics
Origchip NO: 761-STP80NF12
Package: TO-220-3
Datasheet: PDF
Stock: 578
Description: Trans MOSFET N-CH 120V 80A 3-Pin(3+Tab) TO-220 Tube (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	18mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	120V
Technology	MOSFET (Metal Oxide)
Current Rating	80A
Base Part Number	STP80N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	189nC @ 10V
Rise Time	145ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	115 ns
Turn-Off Delay Time	134 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	120V
Avalanche Energy Rating (Eas)	700 mJ
Height	15.75mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free