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STP315N10F7

STMICROELECTRONICS STP315N10F7 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V

Manufacturer: STMicroelectronics
Origchip NO: 761-STP315N10F7
Package: TO-220-3
Datasheet: PDF
Stock: 615
Description: STMICROELECTRONICS STP315N10F7 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V (Kg)

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Details

Tags

Parameters
Series	Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Lead Free	Lead Free
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STP315
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	315W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	62 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	12800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	108ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	148 ns
Continuous Drain Current (ID)	180A
Threshold Voltage	3.5V
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
JEDEC-95 Code	TO-220AB
Mount	Through Hole
Mounting Type	Through Hole
Gate to Source Voltage (Vgs)	20V
Package / Case	TO-220-3
Drain-source On Resistance-Max	0.0027Ohm
Number of Pins	3
Pulsed Drain Current-Max (IDM)	720A
Weight	329.988449mg
REACH SVHC	No SVHC
Transistor Element Material	SILICON
RoHS Status	ROHS3 Compliant
Operating Temperature	-55°C~175°C TJ
Packaging	Tube