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STGP10NB37LZ

STGP10NB37LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi

Manufacturer: STMicroelectronics
Origchip NO: 761-STGP10NB37LZ
Package: TO-220-3
Datasheet: PDF
Stock: 625
Description: STGP10NB37LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-65°C~175°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	VOLTAGE CLAMPING
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Current Rating	20A
Base Part Number	STGP10
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Input Type	Standard
Turn On Delay Time	1.3 μs
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	9.2 μs
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	20A
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	440V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	860 ns
Test Condition	328V, 10A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.8V @ 4.5V, 10A
Turn Off Time-Nom (toff)	17800 ns
Gate Charge	28nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	1.3μs/8μs
Switching Energy	2.4mJ (on), 5mJ (off)
Gate-Emitter Thr Voltage-Max	2.4V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free