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STGD8NC60KDT4

STGD8NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi

Manufacturer: STMicroelectronics
Origchip NO: 761-STGD8NC60KDT4
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 921
Description: STGD8NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	350.003213mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	62W
Terminal Form	GULL WING
Base Part Number	STGD8
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	17 ns
Power - Max	62W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	72 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	15A
Reverse Recovery Time	23.5 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	23 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 3A
Turn Off Time-Nom (toff)	242 ns
Gate Charge	19nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	17ns/72ns
Switching Energy	55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	2.4mm
Length	6.6mm
Width	6.2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free