CURRENCY:USD

All Products

SPB17N80C3

INFINEON - SPB17N80C3ATMA1 - MOSFET, N, TO-263


  • Manufacturer: Infineon
  • Origchip NO: 9152-SPB17N80C3
  • Package: TO-263
  • Datasheet: PDF
  • Stock: 566
  • Description: INFINEON - SPB17N80C3ATMA1 - MOSFET, N, TO-263 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to XINJIADA.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 227W
Turn On Delay Time 25 ns
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 800V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Avalanche Energy Rating (Eas) 670 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 250mOhm
RoHS Status RoHS Compliant
Lead Free Contains Lead
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-263
Number of Pins 3
Packaging Cut Tape
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 17A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
See Relate Datesheet
How can we help you?