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SIR186DP-T1-RE3

MOSFET N-CH 60V 60A POWERPAKSO-8

Manufacturer: Vishay Siliconix
Origchip NO: 880-SIR186DP-T1-RE3
Package: PowerPAK® SO-8
Datasheet: PDF
Stock: 518
Description: MOSFET N-CH 60V 60A POWERPAKSO-8 (Kg)

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IMPORTANT NOTICE

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Manufacturer Package Identifier	S17-0173-Single
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2018
Series	TrenchFET® Gen IV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	1
Power Dissipation-Max	57W Tc
Power Dissipation	5W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 30V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	23A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Height	1.17mm
RoHS Status	ROHS3 Compliant