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SIHU3N50D-E3

MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS

Manufacturer: Vishay Siliconix
Origchip NO: 880-SIHU3N50D-E3
Package: TO-251-3 Short Leads, IPak, TO-251AA
Datasheet: PDF
Stock: 657
Description: MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Weight	329.988449mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	69W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	175pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	3A
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	3A
Pulsed Drain Current-Max (IDM)	5.5A
DS Breakdown Voltage-Min	500V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant