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SIHF10N40D-E3

VISHAY SIHF10N40D-E3 MOSFET Transistor, N Channel, 10 A, 400 V, 0.5 ohm, 10 V, 3 V

Manufacturer: Vishay Siliconix
Origchip NO: 880-SIHF10N40D-E3
Package: TO-220-3 Full Pack
Datasheet: PDF
Stock: 979
Description: VISHAY SIHF10N40D-E3 MOSFET Transistor, N Channel, 10 A, 400 V, 0.5 ohm, 10 V, 3 V (Kg)

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Details

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Parameters
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.6Ohm
Drain to Source Breakdown Voltage	400V
Height	9.8mm
Length	10.63mm
Width	4.83mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	33W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	33W
Case Connection	ISOLATED
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	526pF @ 100V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	3V