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SI7135DP-T1-GE3

Trans MOSFET P-CH 30V 31.6A 8-Pin PowerPAK SO T/R

Manufacturer: Vishay Siliconix
Origchip NO: 880-SI7135DP-T1-GE3
Package: PowerPAK® SO-8
Datasheet: PDF
Stock: 988
Description: Trans MOSFET P-CH 30V 31.6A 8-Pin PowerPAK SO T/R (Kg)

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Details

Tags

Parameters
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	3.9mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	6.25W Ta 104W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	6.25W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8650pF @ 15V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	100ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	-60A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-3 V
Height	1.12mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8