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SI2319DS-T1-GE3

MOSFET P-CH 40V 2.3A SOT23-3

Manufacturer: Vishay Siliconix
Origchip NO: 880-SI2319DS-T1-GE3
Package: TO-236-3, SC-59, SOT-23-3
Datasheet: PDF
Stock: 396
Description: MOSFET P-CH 40V 2.3A SOT23-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	750mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	750mW
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	82m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 20V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	-2.3A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.082Ohm
DS Breakdown Voltage-Min	40V
Nominal Vgs	-3 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant