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RN4906FE,LF(CT

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: 830-RN4906FE,LF(CT
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 975
  • Description: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor (Kg)

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Details

Tags

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity NPN, PNP
Number of Channels 2
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Weight 3.005049mg
Packaging Tape & Reel (TR)
See Relate Datesheet
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