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QSB363YR

Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R

Manufacturer: ON Semiconductor
Origchip NO: 598-QSB363YR
Package: 2-SMD, Yoke Bend
Datasheet: PDF
Stock: 197
Description: Phototransistor IR Chip Silicon 940nm 2-Pin T-3/4 T/R (Kg)

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Details

Tags

Parameters
Power Dissipation	75mW
Viewing Angle	24°
Optoelectronic Device Type	PHOTO TRANSISTOR
Lens Style	Domed
Rise Time	15μs
Fall Time (Typ)	15 μs
Collector Emitter Voltage (VCEO)	5V
Max Collector Current	2mA
Collector Emitter Breakdown Voltage	30V
Lens Color	Black, Clear
Wavelength	940nm
Max Breakdown Voltage	30V
Dark Current	100nA
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	2-SMD, Yoke Bend
Infrared Range	YES
Number of Pins	2
Weight	90mg
Light Current-Nom	1.5mA
Shape	ROUND
Operating Temperature	-40°C~85°C TA
Radiation Hardening	No
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Lead Free	Lead Free
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	DAY LIGHT FILTER
Subcategory	Photo Transistors
Max Power Dissipation	75mW
Orientation	Top View
Number of Functions	1
Operating Supply Voltage	5V
Number of Elements	1
Polarity	NPN
Configuration	SINGLE