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PBLS4001V,115

TRANS NPN PREBIAS/PNP SOT666

Manufacturer: NXP USA Inc.
Origchip NO: 568-PBLS4001V,115
Package: SOT-563, SOT-666
Datasheet: PDF
Stock: 488
Description: TRANS NPN PREBIAS/PNP SOT666 (Kg)

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Resistor - Emitter Base (R2)	2.2k Ω
RoHS Status	ROHS3 Compliant
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	BUILT IN BIAS RESISTOR RATIO 1
Subcategory	Other Transistors
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	PBLS4001
Pin Count	6
JESD-30 Code	R-PDSO-F6
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max	300mW
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	1 NPN Pre-Biased, 1 PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 20mA 5V / 150 @ 100mA 2V
Current - Collector Cutoff (Max)	1μA
Vce Saturation (Max) @ Ib, Ic	150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	50V 40V
Current - Collector (Ic) (Max)	100mA 500mA
Transition Frequency	300MHz
Frequency - Transition	300MHz
Power Dissipation-Max (Abs)	0.3W
Resistor - Base (R1)	2.2k Ω