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NTD3055-150T4G

MOSFET N-CH 60V 9A DPAK

Manufacturer: ON Semiconductor
Origchip NO: 598-NTD3055-150T4G
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 138
Description: MOSFET N-CH 60V 9A DPAK (Kg)

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Details

Tags

Parameters
Pulsed Drain Current-Max (IDM)	27A
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	122MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	9A
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	1.5W Ta 28.8W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	28.8W
Case Connection	DRAIN
Turn On Delay Time	11.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	37.1ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	12.2 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	60V