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NSTB1002DXV5T1G

TRANS NPN PREBIAS/PNP 0.5W SOT55


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NSTB1002DXV5T1G
  • Package: SOT-553
  • Datasheet: PDF
  • Stock: 624
  • Description: TRANS NPN PREBIAS/PNP 0.5W SOT55 (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case SOT-553
Surface Mount YES
Number of Pins 5
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
Qualification Status Not Qualified
Number of Elements 2
Polarity NPN, PNP
Configuration CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation 357mW
Transistor Application SWITCHING
Transistor Type 1 NPN Pre-Biased, 1 PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V / 100 @ 1mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 50V 40V
Current - Collector (Ic) (Max) 100mA 200mA
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 250mV
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 6V
hFE Min 250
Resistor - Base (R1) 47k Ω
Continuous Collector Current -200mA
Resistor - Emitter Base (R2) 47k Ω
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 70ns
Height 600μm
Length 1.7mm
Width 1.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet
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