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NJL0281DG

NJL0281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NJL0281DG
  • Package: TO-264-5
  • Datasheet: PDF
  • Stock: 733
  • Description: NJL0281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-5
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -260V
Max Power Dissipation 180W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating -15A
Frequency 30MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 180W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 260V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Collector Emitter Breakdown Voltage 260V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 260V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Height 26.111mm
Length 20.02mm
Width 5.182mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet
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