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MUBW50-12E8

IGBT MODULE 1200V 90A 350W E3

Manufacturer: IXYS
Origchip NO: 401-MUBW50-12E8
Package: E3
Datasheet: PDF
Stock: 798
Description: IGBT MODULE 1200V 90A 350W E3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Operating Temperature	-40°C~125°C TJ
Packaging	Box
Published	2003
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	35
Terminal Finish	Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	350W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MUBW
Pin Count	35
Qualification Status	Not Qualified
Number of Elements	7
Configuration	Three Phase Inverter with Brake
Case Connection	ISOLATED
Power - Max	350W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	90A
Current - Collector Cutoff (Max)	800μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Reverse Voltage	1.6kV
Input Capacitance	3.8nF
Turn On Time	130 ns
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Turn Off Time-Nom (toff)	710 ns
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.8nF @ 25V
RoHS Status	RoHS Compliant
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E3
Number of Pins	3
Transistor Element Material	SILICON