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MLD1N06CLT4G

MLD1N06CLT4G datasheet pdf and Transistors - Special Purpose product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-MLD1N06CLT4G
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 912
Description: MLD1N06CLT4G datasheet pdf and Transistors - Special Purpose product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status	OBSOLETE (Last Updated: 14 hours ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Packaging	Tape & Reel (TR)
Published	2006
Series	SMARTDISCRETES™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	750MOhm
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Applications	General Purpose
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	62V
Max Power Dissipation	40W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	1A
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MLD1N06C
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	40W
Turn On Delay Time	1.2 ns
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Rise Time	4ns
Drain to Source Voltage (Vdss)	62V
Fall Time (Typ)	3 ns
Transistor Type	NPN, N-Channel Gate-Drain, Source Clamp
Turn-Off Delay Time	4 ns
Continuous Drain Current (ID)	1A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	1A
Drain to Source Breakdown Voltage	59V
Avalanche Energy Rating (Eas)	80 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance	750mOhm
Nominal Vgs	1.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free