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MBR12045CTR

MBR12045CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Origchip NO: 347-MBR12045CTR
  • Package: Twin Tower
  • Datasheet: PDF
  • Stock: 529
  • Description: MBR12045CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Output Current-Max 60A
Application POWER
Current - Average Rectified (Io) 120A DC
Max Reverse Voltage (DC) 45V
Average Rectified Current 120A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 45V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
Factory Lead Time 6 Weeks
Lifecycle Status PRODUCTION (Last Updated: 4 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Packaging Bulk
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr 3mA @ 20V
Voltage - Forward (Vf) (Max) @ If 650mV @ 60A
Forward Current 120A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 800A
See Relate Datesheet
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