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JANTXV2N3999

JANTXV2N3999 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi

Manufacturer: Microsemi Corporation
Origchip NO: 523-JANTXV2N3999
Package: TO-210AA, TO-59-4, Stud
Datasheet: PDF
Stock: 465
Description: JANTXV2N3999 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	20 Weeks
Mount	Stud
Mounting Type	Chassis, Stud Mount
Package / Case	TO-210AA, TO-59-4, Stud
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-65°C~200°C TJ
Packaging	Bulk
Published	2007
Series	Military, MIL-PRF-19500/374
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Power Dissipation	2W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
JESD-30 Code	O-MUPM-X3
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE
Power Dissipation	2W
Case Connection	COLLECTOR
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	80V
Max Collector Current	5A
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A 2V
Current - Collector Cutoff (Max)	10μA
Vce Saturation (Max) @ Ib, Ic	2V @ 500mA, 5A
Current - Collector (Ic) (Max)	10A
Collector Base Voltage (VCBO)	100V
Emitter Base Voltage (VEBO)	8V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant