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JAN2N5416

JAN2N5416 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi

Manufacturer: Microsemi Corporation
Origchip NO: 523-JAN2N5416
Package: TO-205AA, TO-5-3 Metal Can
Datasheet: PDF
Stock: 464
Description: JAN2N5416 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	22 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~200°C TJ
Packaging	Bulk
Published	2007
Series	Military, MIL-PRF-19500/485
JESD-609 Code	e0
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Power Dissipation	750mW
Terminal Position	BOTTOM
Terminal Form	WIRE
Reference Standard	MILITARY STANDARD (USA)
JESD-30 Code	O-MBCY-W4
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE
Power Dissipation	750mW
Case Connection	COLLECTOR
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	300V
Max Collector Current	1A
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA 10V
Current - Collector Cutoff (Max)	1mA
Vce Saturation (Max) @ Ib, Ic	2V @ 5mA, 50mA
Collector Base Voltage (VCBO)	350V
Emitter Base Voltage (VEBO)	6V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant