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J309

IC SWITCH RF N-CH 25V 10MA TO-92


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-J309
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 306
  • Description: IC SWITCH RF N-CH 25V 10MA TO-92 (Kg)

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 201mg
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Current Rating 10mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number J309
Pin Count 3
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 350mW
Current - Test 10mA
Transistor Application AMPLIFIER
Breakdown Voltage -25V
Drain to Source Voltage (Vdss) 25V
Transistor Type N-Channel JFET
Continuous Drain Current (ID) 30mA
Gate to Source Voltage (Vgs) -25V
Gain 16dB
Drain to Source Breakdown Voltage 25V
FET Technology JUNCTION
Noise Figure 3 dB
Voltage - Test 10V
Feedback Cap-Max (Crss) 2.5 pF
Height 5.33mm
Length 5.2mm
See Relate Datesheet
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