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J112-D27Z

JFET N-CH 35V 625MW TO92

Manufacturer: ON Semiconductor
Origchip NO: 598-J112-D27Z
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet: PDF
Stock: 847
Description: JFET N-CH 35V 625MW TO92 (Kg)

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Details

Tags

Parameters
Gate to Source Voltage (Vgs)	-35V
FET Technology	JUNCTION
Drain to Source Resistance	50Ohm
Feedback Cap-Max (Crss)	5 pF
Current - Drain (Idss) @ Vds (Vgs=0)	5mA @ 15V
Voltage - Cutoff (VGS off) @ Id	1V @ 1μA
Resistance - RDS(On)	50Ohm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins	3
Weight	201mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Other Transistors
Voltage - Rated DC	35V
Max Power Dissipation	625mW
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	50mA
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	J112
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	625mW
FET Type	N-Channel
Transistor Application	SWITCHING
Drain to Source Voltage (Vdss)	35V
Continuous Drain Current (ID)	5mA