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IXXX200N65B4

IGBT 650V 370A 1150W PLUS247


  • Manufacturer: IXYS
  • Origchip NO: 401-IXXX200N65B4
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 847
  • Description: IGBT 650V 370A 1150W PLUS247 (Kg)

Purchase & Inquiry

Transport

Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Series GenX4™, XPT™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.15kW
Reach Compliance Code unknown
Element Configuration Single
Power Dissipation 1.15kW
Input Type Standard
Power - Max 1150W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 370A
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 160A
IGBT Type PT
Gate Charge 553nC
Current - Collector Pulsed (Icm) 1000A
Td (on/off) @ 25°C 62ns/245ns
Switching Energy 4.4mJ (on), 2.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet
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