All Products

View All >>

IXGP12N100

IGBT 1000V 24A 100W TO220AB

Manufacturer: IXYS
Origchip NO: 401-IXGP12N100
Package: TO-220-3
Datasheet: PDF
Stock: 335
Description: IGBT 1000V 24A 100W TO220AB (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to XINJIADA.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*12N100
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.5V
Max Collector Current	24A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Turn On Time	100 ns
Test Condition	800V, 12A, 120 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 12A
Turn Off Time-Nom (toff)	900 ns
Gate Charge	65nC
Current - Collector Pulsed (Icm)	48A
Td (on/off) @ 25°C	100ns/850ns
Switching Energy	2.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	700ns
RoHS Status	ROHS3 Compliant
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED