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IRL1004PBF

IRL1004PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRL1004PBF
Package: TO-220-3
Datasheet: PDF
Stock: 576
Description: IRL1004PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Factory Lead Time	12 Weeks
Rds On (Max) @ Id, Vgs	6.5m Ω @ 78A, 10V
Contact Plating	Tin
Mount	Through Hole
Vgs(th) (Max) @ Id	1V @ 250μA
Mounting Type	Through Hole
Package / Case	TO-220-3
Input Capacitance (Ciss) (Max) @ Vds	5330pF @ 25V
Number of Pins	3
Current - Continuous Drain (Id) @ 25°C	130A Tc
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs	100nC @ 4.5V
Rise Time	210ns
Packaging	Tube
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Published	2004
Vgs (Max)	±16V
Series	HEXFET®
Part Status	Active
Fall Time (Typ)	14 ns
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Turn-Off Delay Time	25 ns
Number of Terminations	3
Continuous Drain Current (ID)	130A
Threshold Voltage	1V
Termination	Through Hole
JEDEC-95 Code	TO-220AB
ECCN Code	EAR99
Gate to Source Voltage (Vgs)	16V
Resistance	6.5mOhm
Drain to Source Breakdown Voltage	40V
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Pulsed Drain Current-Max (IDM)	520A
Subcategory	FET General Purpose Power
Dual Supply Voltage	40V
Avalanche Energy Rating (Eas)	700 mJ
Voltage - Rated DC	40V
Nominal Vgs	1 V
Technology	MOSFET (Metal Oxide)
Height	8.77mm
Current Rating	130A
Length	10.6426mm
Number of Elements	1
Width	4.82mm
Power Dissipation-Max	200W Tc
Radiation Hardening	No
Element Configuration	Single
REACH SVHC	No SVHC
Operating Mode	ENHANCEMENT MODE
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Power Dissipation	200W
Case Connection	DRAIN