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IRGSL15B60KDPBF

IRGSL15B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRGSL15B60KDPBF
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet: PDF
Stock: 650
Description: IRGSL15B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	ULTRA FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	208W
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Number of Elements	1
Rise Time-Max	25ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	208W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	31A
Reverse Recovery Time	92 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	52 ns
Test Condition	400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 15A
Turn Off Time-Nom (toff)	231 ns
IGBT Type	NPT
Gate Charge	56nC
Current - Collector Pulsed (Icm)	62A
Td (on/off) @ 25°C	34ns/184ns
Switching Energy	220μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant