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IRGS15B60KPBF

IRGS15B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRGS15B60KPBF
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet: PDF
Stock: 148
Description: IRGS15B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	208W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	22ns
Element Configuration	Single
Power Dissipation	208W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	31A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.2V
Turn On Time	52 ns
Test Condition	400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 15A
Turn Off Time-Nom (toff)	231 ns
IGBT Type	NPT
Gate Charge	56nC
Current - Collector Pulsed (Icm)	62A
Td (on/off) @ 25°C	34ns/184ns
Switching Energy	220μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free