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IRG4PH50SPBF

IRG4PH50SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRG4PH50SPBF
Package: TO-247-3
Datasheet: PDF
Stock: 560
Description: IRG4PH50SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

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Parameters
Max Power Dissipation	200W
Current Rating	57A
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	32 ns
Transistor Application	POWER CONTROL
Rise Time	29ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	845 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	57A
Continuous Drain Current (ID)	57A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	1.2kV
Gate to Source Voltage (Vgs)	30V
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.75V
Input Capacitance	3.6nF
Turn On Time	62 ns
Test Condition	960V, 33A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 33A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	57A
Turn Off Time-Nom (toff)	2170 ns
Gate Charge	167nC
Current - Collector Pulsed (Icm)	114A
Td (on/off) @ 25°C	32ns/845ns
Switching Energy	1.8mJ (on), 19.6mJ (off)
Height	24.99mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Voltage - Rated DC	1.2kV