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IRFU310PBF

MOSFET N-CH 400V 1.7A I-PAK

Manufacturer: Vishay Siliconix
Origchip NO: 880-IRFU310PBF
Package: TO-251-3 Short Leads, IPak, TO-251AA
Datasheet: PDF
Stock: 540
Description: MOSFET N-CH 400V 1.7A I-PAK (Kg)

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Details

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Parameters
Drain to Source Voltage (Vdss)	400V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	1.7A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	400V
Input Capacitance	170pF
Max Junction Temperature (Tj)	150°C
Factory Lead Time	8 Weeks
Drain to Source Resistance	3.6Ohm
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Rds On Max	3.6 Ω
Number of Pins	3
Height	6.22mm
Supplier Device Package	TO-251AA
Length	6.73mm
Weight	329.988449mg
Operating Temperature	-55°C~150°C TJ
Width	2.39mm
Packaging	Tube
Radiation Hardening	No
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH SVHC	Unknown
Resistance	3.6Ohm
Max Operating Temperature	150°C
RoHS Status	ROHS3 Compliant
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Lead Free	Lead Free
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta 25W Tc
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	7.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	170pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	9.9ns