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IRFI4229PBF

IRFI4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRFI4229PBF
Package: TO-220-3
Datasheet: PDF
Stock: 796
Description: IRFI4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Length	10.63mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Number of Elements	1
Power Dissipation-Max	46W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	46W
Case Connection	ISOLATED
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	46m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4480pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	19A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.046Ohm
Drain to Source Breakdown Voltage	250V
Pulsed Drain Current-Max (IDM)	72A
Avalanche Energy Rating (Eas)	110 mJ
Height	9.8mm