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IRF840PBF

IRF840PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi

Manufacturer: Vishay Siliconix
Origchip NO: 880-IRF840PBF
Package: TO-220-3
Datasheet: PDF
Stock: 624
Description: IRF840PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi (Kg)

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Details

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Parameters
Rds On (Max) @ Id, Vgs	850m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.85Ohm
Drain to Source Breakdown Voltage	500V
Recovery Time	970 ns
Nominal Vgs	4 V
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	11 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	8A
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING