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IRF6797MTRPBF

MOSFET N-CH 25V 36A DIRECTFET-MX

Manufacturer: Infineon Technologies
Origchip NO: 376-IRF6797MTRPBF
Package: DirectFET™ Isometric MX
Datasheet: PDF
Stock: 325
Description: MOSFET N-CH 25V 36A DIRECTFET-MX (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	89W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4m Ω @ 38A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	5790pF @ 13V
Current - Continuous Drain (Id) @ 25°C	36A Ta 210A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 4.5V
Rise Time	32ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	36A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	300A
Avalanche Energy Rating (Eas)	260 mJ
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant