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IRF6636TRPBF

MOSFET N-CH 20V 18A DIRECTFET

Manufacturer: Infineon Technologies
Origchip NO: 376-IRF6636TRPBF
Package: DirectFET™ Isometric ST
Datasheet: PDF
Stock: 746
Description: MOSFET N-CH 20V 18A DIRECTFET (Kg)

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Details

Tags

Parameters
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Current Rating	18A
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2420pF @ 10V
Current - Continuous Drain (Id) @ 25°C	18A Ta 81A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 4.5V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.2 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	15A
Threshold Voltage	2.45V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Avalanche Energy Rating (Eas)	28 mJ
Height	506μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric ST
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006