All Products

IRF640NPBF

IRF640NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRF640NPBF
Package: TO-220-3
Datasheet: PDF
Stock: 845
Description: IRF640NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to XINJIADA.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
Current Rating	18A
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	67nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5.5 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	72A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	247 mJ
Recovery Time	241 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	19.8mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1999
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	150mOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power