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IRF5305STRLPBF

IRF5305STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRF5305STRLPBF
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet: PDF
Stock: 385
Description: IRF5305STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	60mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Subcategory	Other Transistors
Voltage - Rated DC	-55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-31A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.8W Ta 110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	66ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	63 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	-31A
Threshold Voltage	-4V
JEDEC-95 Code	TO-252
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-55V
Dual Supply Voltage	-55V
Avalanche Energy Rating (Eas)	280 mJ
Recovery Time	110 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-4 V
Height	5.084mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free