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IR2112PBF

Through Hole Tube Active EAR99 Gate Drivers ICs Non-Inverting 600V V 14-DIP (0.300, 7.62mm) IR2112PBF High-Side or Low-Side

Manufacturer: Infineon Technologies
Origchip NO: 376-IR2112PBF
Package: 14-DIP (0.300, 7.62mm)
Datasheet: PDF
Stock: 453
Description: Through Hole Tube Active EAR99 Gate Drivers ICs Non-Inverting 600V V 14-DIP (0.300, 7.62mm) IR2112PBF High-Side or Low-Side (Kg)

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	14-DIP (0.300, 7.62mm)
Number of Pins	14
Manufacturer Package Identifier	14-Lead PDIP
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	1996
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	14
ECCN Code	EAR99
Type	Integrated Circuit (IC)
Terminal Finish	Matte Tin (Sn)
Subcategory	MOSFET Drivers
Max Power Dissipation	1.6W
Technology	CMOS
Voltage - Supply	10V~20V
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	250
Number of Functions	1
Supply Voltage	15V
Time@Peak Reflow Temperature-Max (s)	30
Base Part Number	IR2112PBF
Number of Outputs	2
Output Voltage	20V
Max Output Current	500mA
Operating Supply Voltage	15V
Nominal Supply Current	180μA
Power Dissipation	1.6W
Output Current	250mA
Max Supply Current	180μA
Propagation Delay	180 ns
Input Type	Non-Inverting
Turn On Delay Time	30 ns
Max Output Voltage	20V
Rise Time	130ns
Fall Time (Typ)	65 ns
Turn-Off Delay Time	30 ns
Min Output Voltage	10V
Rise / Fall Time (Typ)	80ns 40ns
Channel Type	Independent
Turn On Time	0.18 μs
Output Peak Current Limit-Nom	0.5A
Driven Configuration	High-Side or Low-Side
Gate Type	IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink)	250mA 500mA
High Side Driver	YES
Logic Voltage - VIL, VIH	6V 9.5V
Turn Off Time	0.16 μs
High Side Voltage - Max (Bootstrap)	600V
Height	4.9276mm
Length	20.1676mm
Width	7.11mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

IR2112PBF Overview

For greater flexibility, its 14-DIP (0.300, 7.62mm) package is used.The packaging method is indicated by Tube.The device is mounted in the direction of Through Hole.A supply voltage of 10V~20V demonstrates its superiority.A gate type of IGBT, N-Channel MOSFET has been used in its design.This device is allowed to operate in a temperature range of -40°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.There are 14 terminations to form the base of its configuration.You will find various related parts under the base part number IR2112PBF.In this case, Through Hole indicates how the device is mounted.Mosfet driver is configured wMosfet driverh 14 pins when designing.The device is specifically designed to operate at 15V volts.There is a maximum output current of 500mA.This subcategory of MOSFET Drivers has a number of useful electronic components.Maximum (Bootstrap) voltage can be up to 600V.Based on its basis, it integrates 2 outputs.Mosfet driver supports an output current of 250mA.Using 1.6W as an example, the maximum power dissipation shows how well it is able to transfer and conduct power loss without becoming overheated.To maintain higher stability, the supply current should always be 180μA.When this voltage is produced, it is marked as 20V.Mosfet gate drivers is recommended that the operating voltage of the supply be set at 15V.A maximum voltage of 20V should be maintained for the output voltage.

IR2112PBF Features

Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.6W