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IPW90R120C3

INFINEON - IPW90R120C3 - Power MOSFET, N Channel, 900 V, 36 A, 0.1 ohm, TO-247, Through Hole

Manufacturer: Infineon
Origchip NO: 9152-IPW90R120C3
Package: TO-247-3
Datasheet: PDF
Stock: 452
Description: INFINEON - IPW90R120C3 - Power MOSFET, N Channel, 900 V, 36 A, 0.1 ohm, TO-247, Through Hole (Kg)

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Details

Tags

Parameters
Polarity/Channel Type	N-CHANNEL
Fall Time (Typ)	24 ns
Turn-Off Delay Time	400 ns
Continuous Drain Current (ID)	36A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	900V
Pulsed Drain Current-Max (IDM)	96A
Dual Supply Voltage	900V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance	120mOhm
Rds On Max	120 mΩ
Nominal Vgs	3 V
Capacitance - Input	6.8nF
Height	21.1mm
Length	16.13mm
Width	5.21mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free
Contact Plating	Tin
Package / Case	TO-247-3
Surface Mount	NO
Number of Pins	3
Pbfree Code	yes
Number of Terminations	3
Termination	Through Hole
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Power
Pin Count	3
Number of Elements	1
Power Dissipation-Max	417W
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	417W
Turn On Delay Time	70 ns
Voltage - Threshold	3V
Transistor Application	SWITCHING
Rise Time	20ns
Drain to Source Voltage (Vdss)	900V