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IPW65R080CFDAFKSA1

Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247

Manufacturer: Infineon Technologies
Origchip NO: 376-IPW65R080CFDAFKSA1
Package: TO-247-3
Datasheet: PDF
Stock: 980
Description: Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 (Kg)

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Details

Tags

Parameters
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 17.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.76mA
Input Capacitance (Ciss) (Max) @ Vds	4440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	43.3A Tc
Gate Charge (Qg) (Max) @ Vgs	161nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	43.3A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.08Ohm
Drain to Source Breakdown Voltage	650V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2008
Series	Automotive, AEC-Q101, CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	391W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	20 ns
FET Type	N-Channel