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IPD50P04P413ATMA1

IPD50P04P413ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IPD50P04P413ATMA1
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 595
Description: IPD50P04P413ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	12.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 85μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3670pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Rise Time	10ns
Factory Lead Time	26 Weeks
Drain to Source Voltage (Vdss)	40V
Mount	Surface Mount
Drive Voltage (Max Rds On,Min Rds On)	10V
Mounting Type	Surface Mount
Vgs (Max)	±20V
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Fall Time (Typ)	28 ns
Transistor Element Material	SILICON
Turn-Off Delay Time	22 ns
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
Continuous Drain Current (ID)	50A
JESD-609 Code	e3
Gate to Source Voltage (Vgs)	20V
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Dual Supply Voltage	-40V
Number of Terminations	2
Drain-source On Resistance-Max	0.0126Ohm
ECCN Code	EAR99
Pulsed Drain Current-Max (IDM)	20A
Terminal Finish	Tin (Sn)
Avalanche Energy Rating (Eas)	18 mJ
Technology	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant
Terminal Position	SINGLE
Lead Free	Contains Lead
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	58W Tc
Operating Mode	ENHANCEMENT MODE