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IPB65R110CFDATMA1

Trans MOSFET N-CH 700V 31.2A 3-Pin(2+Tab) TO-263

Manufacturer: Infineon Technologies
Origchip NO: 376-IPB65R110CFDATMA1
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet: PDF
Stock: 479
Description: Trans MOSFET N-CH 700V 31.2A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	277.8W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.3mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3240pF @ 100V
Current - Continuous Drain (Id) @ 25°C	31.2A Tc
Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	31.2A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Pulsed Drain Current-Max (IDM)	99.6A
Avalanche Energy Rating (Eas)	845 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead