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IPB048N15N5ATMA1

IPB048N15N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IPB048N15N5ATMA1
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet: PDF
Stock: 716
Description: IPB048N15N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Parameters
Drain-source On Resistance-Max	0.0048Ohm
Pulsed Drain Current-Max (IDM)	480A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	230 mJ
RoHS Status	ROHS3 Compliant
Factory Lead Time	13 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.8m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4.6V @ 264μA
Input Capacitance (Ciss) (Max) @ Vds	7800pF @ 75V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	120A