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IKZ50N65EH5XKSA1

IKZ50N65EH5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IKZ50N65EH5XKSA1
Package: TO-247-4
Datasheet: PDF
Stock: 427
Description: IKZ50N65EH5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Turn On Time	27 ns
Test Condition	400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Turn Off Time-Nom (toff)	311 ns
IGBT Type	Trench
Gate Charge	109nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	20ns/250ns
Switching Energy	410μJ (on), 190μJ (off)
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2008
Series	TrenchStop™ 5
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	273W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	273W
Transistor Application	POWER CONTROL
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	85A
Reverse Recovery Time	53 ns
Collector Emitter Breakdown Voltage	650V