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IKD10N60RFATMA1

IKD10N60RFATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IKD10N60RFATMA1
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 487
Description: IKD10N60RFATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate Charge	64nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	12ns/168ns
Switching Energy	190μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.7V
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-40°C~175°C TJ
Packaging	Cut Tape (CT)
Published	2008
Series	TrenchStop®
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	*KD10N60
Element Configuration	Single
Input Type	Standard
Power - Max	150W
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Reverse Recovery Time	72 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Test Condition	400V, 10A, 26 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 10A
IGBT Type	Trench Field Stop