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HGTG30N60B3

HGTG30N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-HGTG30N60B3
Package: TO-247-3
Datasheet: PDF
Stock: 431
Description: HGTG30N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	208W
Current Rating	60A
Base Part Number	HGTG30N60
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	208W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.45V
Max Breakdown Voltage	600V
Turn On Time	56 ns
Test Condition	480V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Continuous Collector Current	60A
Turn Off Time-Nom (toff)	365 ns
Gate Charge	170nC
Current - Collector Pulsed (Icm)	220A
Td (on/off) @ 25°C	36ns/137ns
Switching Energy	500μJ (on), 680μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	150ns
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free