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FS75R12W2T4BOMA1

FS75R12W2T4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-FS75R12W2T4BOMA1
Package: Module
Datasheet: PDF
Stock: 524
Description: FS75R12W2T4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	33
JESD-30 Code	R-XUFM-X15
Qualification Status	Not Qualified
Number of Elements	6
Configuration	Full Bridge
Power Dissipation	375W
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	107A
Current - Collector Cutoff (Max)	1mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.15V
Turn On Time	185 ns
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 75A
Turn Off Time-Nom (toff)	490 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	4.3nF @ 25V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead
Factory Lead Time	16 Weeks
Mount	Screw
Mounting Type	Chassis Mount
Package / Case	Module
Number of Pins	18
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C
Published	2002
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	15
ECCN Code	EAR99
Max Power Dissipation	375W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED