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FGH30S130P

FGH30S130P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FGH30S130P
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 599
  • Description: FGH30S130P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.3kV
Max Collector Current 60A
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 1.3kV
Voltage - Collector Emitter Breakdown (Max) 1300V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 413 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Turn Off Time-Nom (toff) 905 ns
IGBT Type Trench Field Stop
Gate Charge 78nC
Current - Collector Pulsed (Icm) 90A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 210ns
Height 20.82mm
Length 15.87mm
Width 4.82mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet
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