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FGD3040G2-F085

FGD3040G2-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-FGD3040G2-F085
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 508
Description: FGD3040G2-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
RoHS Status	ROHS3 Compliant
Factory Lead Time	22 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Form	GULL WING
Base Part Number	FGD3040
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	7000ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Logic
Power - Max	150W
Clamping Voltage	400V
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.5V
Max Collector Current	41A
Collector Emitter Breakdown Voltage	400V
Collector Emitter Saturation Voltage	1.15V
Max Breakdown Voltage	400V
Test Condition	300V, 6.5A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.25V @ 4V, 6A
Gate Charge	21nC
Td (on/off) @ 25°C	-/4.8μs
Gate-Emitter Voltage-Max	14V
Gate-Emitter Thr Voltage-Max	2.2V
Fall Time-Max (tf)	15000ns
Radiation Hardening	No