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FF900R12IP4DVBOSA1

FF900R12IP4DVBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-FF900R12IP4DVBOSA1
Package: Module
Datasheet: PDF
Stock: 163
Description: FF900R12IP4DVBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	50 Weeks
Mounting Type	Chassis Mount
Package / Case	Module
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C
Published	2002
Series	PrimePack™2
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	10
ECCN Code	EAR99
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PUFM-X10
Number of Elements	2
Configuration	2 Independent
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	5100W
Transistor Application	GENERAL PURPOSE
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Input	Standard
Current - Collector Cutoff (Max)	5mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	900A
Turn On Time	370 ns
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 900A
Turn Off Time-Nom (toff)	1300 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	54nF @ 25V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead